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TCM809 bảng dữ liệu(PDF) 2 Page - Microchip Technology

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TCM809/TCM810
DS21661D-page 2
© 2005 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Supply Voltage (VDD to GND) ........................................................6.0V
RESET, RESET ................................................... -0.3V to (VDD +0.3V)
Input Current, VDD.......................................................................20 mA
Output Current, RESET, RESET.................................................20 mA
dV/dt (VDD)........................................................................... 100V/µsec
Operating Temperature Range ...................................-40°C to +125°C
Power Dissipation (TA = 70°C):
3-Pin SOT-23B (derate 4 mW/°C above +70°C) ....................320 mW
3-Pin SC-70 (derate 2.17 mW/°C above +70°C)....................174 mW
Storage Temperature Range .......................................-65°C to +150°C
Maximum Junction Temperature, T
J............................................ 150°C
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
ELECTRICAL CHARACTERISTICS
VDD = Full Range, TA = Operating Temperature Range, unless otherwise noted. Typical values are at TA = +25°C,
VDD = 5V for L/M/J, 3.3V for T/S, 3.0V for R and 2.5V for Z (Note 1).
Parameter
Sym
Min
Typ
Max
Units
Test Conditions
VDD Range
1.0
5.5
V
TA = 0°C to +70°C
1.2
5.5
TA = – 40°C to +125°C
Supply Current
ICC
—12
30
µA
TCM8xxL/M/J:
VDD < 5.5V
—9
25
TCM8xxR/S/T/Z:
VDD < 3.6V
Reset Threshold (Note 2)
VTH
4.56
4.63
4.70
V
TCM8xxL:
TA = +25°C
4.50
4.75
TA = – 40°C to +125°C
4.31
4.38
4.45
V
TCM8xxM:
TA = +25°C
4.25
4.50
V
TA = – 40°C to +125°C
3.93
4.00
4.06
V
TCM809J:
TA = +25°C
3.89
4.10
V
TA = – 40°C to +125°C
3.04
3.08
3.11
V
TCM8xxT:
TA = +25°C
3.00
3.15
V
TA = – 40°C to +125°C
2.89
2.93
2.96
V
TCM8xxS:
TA = +25°C
2.85
3.00
V
TA = – 40°C to +125°C
2.59
2.63
2.66
V
TCM8xxR:
TA = +25°C
2.55
2.70
V
TA = – 40°C to +125°C
2.28
2.32
2.35
V
TCM8xxZ:
TA = +25°C
2.25
2.38
V
TA = – 40°C to +125°C
Reset Threshold Tempco
30
ppm/°C
VDD to Reset Delay,
65
µsec
VDD = VTH to (VTH – 100 mV) (Note 2)
Reset Active Time Out
Period
140
320
560
msec
RESET Output Voltage
Low (TCM809)
VOL
——
0.3
V
TCM809R/S/T/Z:
VDD = VTH min, ISINK = 1.2 mA
——
0.4
TCM809L/M/J:
VDD = VTH min, ISINK = 3.2 mA
——
0.3
VDD > 1.0V, ISINK = 50 µA
RESET Output Voltage
High (TCM809)
VOH
0.8 VDD
——
V
TCM809R/S/T/Z: VDD > VTH max, ISOURCE = 500 µA
VDD – 1.5
TCM809L/M/J: VDD > VTH max, ISOURCE = 800 µA
RESET Output Voltage
Low (TCM810)
VOL
——
0.3
V
TCM810R/S/T/Z:VDD = VTH max, ISINK = 1.2 mA
——
0.4
TCM810L/M:
VDD = VTH max, ISINK = 3.2 mA
RESET Output Voltage
High (TCM810)
VOH
0.8 VDD
——
V
1.8 < VDD < VTH min, ISOURCE = 150 µA
Note
1:
Production testing done at T
A = +25°C, overtemperature limits ensured by QC screen.
2: RESET output for TCM809, RESET output for TCM810.



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