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STM8L052R8T6 bảng dữ liệu(PDF) 77 Page - STMicroelectronics

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STM8L052R8T6 bảng dữ liệu(HTML) 77 Page - STMicroelectronics

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STM8L052R8
Electrical parameters
Doc ID023337 Rev 2
77/109
Figure 17.
LSE oscillator circuit diagram
Internal clock sources
Subject to general operating conditions for VDD, and TA.
High speed internal RC oscillator (HSI)
In the following table, data are based on characterization results, not tested in production,
unless otherwise specified.
OSC_OUT
OSC_IN
fLSE
CL1
CL2
RF
STM8
Resonator
Consumption
control
gm
Rm
Cm
Lm
CO
Resonator
Table 30.
HSI oscillator characteristics
Symbol
Parameter
Conditions(1)
Min.
Typ.
Max.
Unit
fHSI
Frequency
VDD = 3.0 V
16
MHz
ACCHSI
Accuracy of HSI
oscillator (factory
calibrated)
VDD = 3.0 V, TA = 25 °C
-1 (2)
1 (2)
%
1.8 V
≤ VDD ≤ 3.6 V,
-40 °C
≤ TA ≤ 85 °C
-5
5
%
TRIM
HSI user trimming
step(3)
Trimming code
≠ multiple of 16
0.4
0.7
%
Trimming code = multiple of 16
± 1.5
%
tsu(HSI)
HSI oscillator setup
time (wakeup time)
3.7
6 (4)
µs
IDD(HSI)
HSI oscillator power
consumption
100
140(4)
µA
1.
VDD = 3.0 V, TA = -40 to 85 °C unless otherwise specified.
2.
Tested in production.
3.
The trimming step differs depending on the trimming code. It is usually negative on the codes which are multiples of 16
(0x00, 0x10, 0x20, 0x30...0xE0). Refer to the AN3101 “STM8L15x internal RC oscillator calibration” application note for
more details.
4.
Guaranteed by design, not tested in production



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