50N06-Q

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-C76.a

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ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current

ID

50

A

Pulsed Drain Current (Note 2)

IDM

100

A

Avalanche Energy

Single Pulsed (Note 3)

EAS

100.4

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

2.9

V/ns

Power Dissipation

PD

53.5

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

3. L = 0.1mH, IAS = 44.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

4. ISD ≤ 25A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

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THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

110

°C/W

Junction to Case

θJC

2.33 (Note)

°C/W

Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.