Nichrome on Silicon

BI Technologies Corporation

4200 Bonita Place

Fullerton, CA 92835 USA

August 25, 2006

page 2 of 3

BI technologies

PACKAGE POWER, WATTS

PACKAGE POWER, WATTS

PACKAGE POWER, WATTS

PACKAGE POWER, WATTS @ 70°C

@ 70°C

@ 70°C

@ 70°C

3

3

3

3

QSOP

SOIC (Narrow)

SOIC (Wide)

P-DIP

16

20

24

8

14

16

16

20

24

8

14

16

0.75

1.0

1.0

0.4

0.7

0.8

1.0

1.2

1.2

0.4

0.6

0.8

POWER DERA

POWER DERA

POWER DERA

POWER DERATING CURVE

TING CURVE

TING CURVE

TING CURVE

ENVIRONMENTAL (MIL

ENVIRONMENTAL (MIL

ENVIRONMENTAL (MIL

ENVIRONMENTAL (MIL----R

R

R

R----83401)

83401)

83401)

83401)

Thermal Shock plus Power Conditioning

∆R 0.1%

Short Time Overload

∆R 0.1%

Terminal Strength

∆R 0.1%

Moisture Resistance

∆R 0.1%

Mechanical Shock

∆R 0.1%

Vibration

∆R 0.1%

Low Temperature Operation

∆R 0.05%

High Temperature Exposure

∆R 0.1%

Resistance to Solder Heat

∆R 0.1%

Marking Permanency

Per MIL-STD-202, Method 215

Flammability

UL-94V-0 Rated

Storage Temperature Range

-55°C to +125°C

MECHANICAL

MECHANICAL

MECHANICAL

MECHANICAL

Lead Plating

80/20 Tin Lead (Standard)

100 matt Tin (RoHS)

Lead Material

Copper Alloy

Lead Configuration

Gull Wing

Lead Coplanarity

0.004” (0.102 mm)

Substrate Material

Silicon

Resistor Material

Passivated Nichrome

Body Material

Molded Epoxy

3

Power per resistor @ 70°C, Maximum is 100 mW, not to exceed package power