IRF520VPBF datasheet(1/8 Pages) IRF

tên linh kiện	IRF520VPBF

Giải thích chi tiết về linh kiện	HEXFET짰 Power MOSFET

PDF	8 Pages

Scroll/Zoom	100%

nhà sản xuất	IRF [International Rectifier]

Trang chủ	http://www.irf.com

Logo

1 / 8 page

IRF520VPbF

HEXFET® Power MOSFET

11/5/03

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

3.4

RθCS

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

RθJA

Junction-to-Ambient

–––

62

Thermal Resistance

www.irf.com

1

VDSS = 100V

RDS(on) = 0.165Ω

ID = 9.6A

S

D

G

TO-220AB

Advanced HEXFET® Power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220 contribute

to its wide acceptance throughout the industry.

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Optimized for SMPS Applications

Description

PD - 94819

Absolute Maximum Ratings

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

9.6

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

6.8

A

IDM

Pulsed Drain Current

37

PD @TC = 25°C

Power Dissipation

44

W

Linear Derating Factor

0.29

W/°C

VGS

Gate-to-Source Voltage

± 20

V

IAR

Avalanche Current

9.2

A

EAR

Repetitive Avalanche Energy

4.4

mJ

dv/dt

Peak Diode Recovery dv/dt

7.0

V/ns

TJ

Operating Junction and

-55 to + 175

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

Lead-Free

Số phần tương tự - IRF520VPBF

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRF520V	200Kb / 8P	Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)
	IRF520VL	129Kb / 10P	Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)
	IRF520VLPBF	225Kb / 11P	HEXFET Power MOSFET
	IRF520VS	129Kb / 10P	Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)
	IRF520VSPBF	225Kb / 11P	HEXFET Power MOSFET

More results

Mô tả tương tự - IRF520VPBF

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRFBA1405PPBF	153Kb / 10P	HEXFET짰 Power MOSFET
	IRFBC40SPBF	360Kb / 10P	HEXFET짰 Power MOSFET
	IRFR3707PBF	221Kb / 9P	HEXFET짰 Power MOSFET
	IRF1010EPBF	231Kb / 8P	HEXFET짰 Power MOSFET
	IRFZ44EPBF	147Kb / 8P	HEXFET짰 Power MOSFET
	IRLIZ24NPBF	843Kb / 8P	HEXFET짰 Power MOSFET
	IRLZ44NSPBF	336Kb / 10P	HEXFET짰 Power MOSFET
	IRF9510PBF	1Mb / 8P	HEXFET짰 Power MOSFET
	IRF820PBF	3Mb / 7P	HEXFET짰 Power MOSFET
	IRF520NPBF	178Kb / 9P	HEXFET짰 Power MOSFET

More results

IRF520VPBF bảng dữ liệu(PDF) 1 Page - International Rectifier

IRF520VPBF bảng dữ liệu(HTML) 1 Page - International Rectifier

Số phần tương tự - IRF520VPBF

Mô tả tương tự - IRF520VPBF

Html Pages

1 2 3 4 5 6 7 8

bảng dữ liệu tải về

Link URL