2000 Apr 20

13

Philips Semiconductors

Product specification

TDA8003TS

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

HANDLING

Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is

desirable to take normal precautions appropriate to handle Metal Oxide Semiconductor (MOS) devices.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

power supply voltage

−0.5

+6.5

V

signal supply voltage

−0.5

+6.5

V

interface signal supply voltage

−0.5

+6.5

V

input voltage

on pins 1, 17, 21 and 24

−0.5

+6.5

V

on pins 15, 16, 22 and 23

−0.5

on pins 19 and 20

−0.5

+6.5

V

on pins 9, 11 and 13

−0.5

V

on pin 12

−0.5

+6.5

V

on pin 8

−0.5

+7.5

V

on pins 2, 4, 6 and 7

−0.5

DC input current

on pins 1, 17, 19, 20, 21, 22, 23 and 24

−5+5

mA

on pin 15

−5

+10

mA

DC input/output current

on pins 2, 4, 6, 7 and 8

−40

+40

mA

on pin 16

−5+5

mA

transient input/output current on pin 17

duration 1 ms

−40

+40

mA

continuous total power dissipation

−

230

mW

operating junction temperature

−

125

°C

IC storage temperature

−55

+150

°C

electrostatic discharge voltage

on pins 9, 11, 12, 13 and 16

−6+6

kV

on any other pin

−2+2

kV

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient in free air

102

K/W