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TDA6103Q bảng dữ liệu(PDF) 3 Page - NXP Semiconductors |
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TDA6103Q bảng dữ liệu(HTML) 3 Page - NXP Semiconductors |
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3 / 16 page ![]() March 1994 3 Philips Semiconductors Preliminary specification Triple video output amplifier TDA6103Q PINNING SYMBOL PIN DESCRIPTION Vi1 1 inverting input 1 Vi2 2 inverting input 2 Vi3 3 inverting input 3 GND 4 ground, fin Vip 5 non-inverting input VDD 6 supply voltage Voc3 7 cathode output 3 Voc2 8 cathode output 2 Voc1 9 cathode output 1 Fig.2 Pin configuration. 1 2 3 4 5 6 7 8 9 MGA969 Vi1 GND VDD Voc3 TDA6103Q Vi2 Vi3 Voc2 Voc1 Vip LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Voltages measured with respect to GND (pin 4); currents as specified in Fig.1; unless otherwise specified. HANDLING Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is desirable to take normal precautions appropriate to handling MOS devices (see “Handling MOS Devices”). QUALITY SPECIFICATION Quality specification “SNW-FQ-611 part E” is applicable and can be found in the “Quality reference pocketbook” (ordering number 9398 510 34011). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDD supply voltage 0 250 V Vi input voltage 0 12 V Vidm differential mode input voltage −6+6 V Voc cathode output voltage 0 VDD V IocsmL LOW non-repetitive peak cathode output current flashover discharge = 50 µC 05A IocsmH HIGH non-repetitive peak cathode output current flashover discharge = 100 nC 0 10 A Tstg storage temperature −55 +150 °C Tj junction temperature −20 +150 °C Ves electrostatic handling human body model (HBM) − tbf V machine model (MM) − tbf V |
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