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TPR700 bảng dữ liệu(PDF) 1 Page - Advanced Power Technology

tên linh kiện TPR700
Giải thích chi tiết về linh kiện  high power COMMON BASE bipolar transistor.
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TPR700 bảng dữ liệu(HTML) 1 Page - Advanced Power Technology

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Advanced Power Technology reserves the right to change, without notice, the specifications and information contained
herein. Visit our web site at www.advancedpower.com or contact our factory direct.
TPR 700
700 Watts, 50 Volts, Pulsed
Avionics 1030 – 1090 MHz
GENERAL DESCRIPTION
The TPR 700 is a high power COMMON BASE bipolar transistor. It is designed
for pulsed systems in the frequency band 1030-1090 MHz. The device has gold
thin-film metallization for proven highest MTTF. The transistor includes input
returns for fast rise time. Low thermal resistance package reduces junction
temperature, extends life.
CASE OUTLINE
55KT, Style 1
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
oC2
2050 Watts
Maximum Voltage and Current
BVces
Collector to Base Voltage
65 Volts
BVebo
Emitter to Base Voltage
3.5 Volts
Ic
Collector Current
55 Amps
Maximum Temperatures
Storage Temperature
- 65 to + 200
oC
Operating Junction Temperature
+ 200
oC
ELECTRICAL CHARACTERISTICS @ 25
OC
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
ηc
tr
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Rise Time
Load Mismatch Tolerance
F = 1030 MHz
Vcc = 50 Volts
PW = 10
µsec
DF = 1%
F = 1030 MHz
700
6.7
35
150
70
30:1
Watts
Watts
dB
%
ns
BVebo
3
BVces
hFE
θjc2
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC - Current Gain
Thermal Resistance
Ie = 50mA
Ic = 100mA
Ic = 1000mA, Vce = 5 V
3.5
65
10
0.08
Volts
Volts
oC/W
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
3: Cannot measure due to input return
Rev A. – Sept 2005


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