MS1006 datasheet(1/3 Pages) ADPOW

tên linh kiện	MS1006

Giải thích chi tiết về linh kiện	RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS

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nhà sản xuất	ADPOW [Advanced Power Technology]

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MS1006

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

DESCRIPTION:

The MS1006 is a 50 V Class AB epitaxial silicon NPN planar

transistor designed primarily for SSB and VHF communications.

This device utilizes emitter ballasting for improved ruggedness and

reliability.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

110

V

VCEO

Collector-Emitter Voltage

55

V

VEBO

Emitter-Base Voltage

4.0

V

IC

Device Current

3.25

A

PDISS

Power Dissipation

127

W

TJ

Junction Temperature

+200

°°C

TSTG

Storage Temperature

-65 to +150

°°C

Thermal Data

RTH(j-c)

Junction-Case Thermal Resistance

2.0

°°C/W

Features

• Optimized for SSB

• 30 MHz

• 50 Volts

• Common Emitter

• Gold Metallization

• P

OUT = 75 W Min.

• G

P = 14 dB Gain

RF AND MICROWAVE TRANSISTORS

HF SSB APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

Số phần tương tự - MS1006

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Microsemi Corporation	MS1006	120Kb / 2P	10 AMP SCHOTTKY BARRIER RECTIFIER

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STMicroelectronics	SD1407	45Kb / 4P	RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Oct-1992
STMicroelectronics	SD1411	52Kb / 3P	RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Oct-1992
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	MS1204	102Kb / 3P	RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS
	MSC1075MP	141Kb / 3P	RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS
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