140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

MS1003

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

RF & MICROWAVE TRANSISTORS

VHF MOBILE APPLICATIONS

DESCRIPTION:

DESCRIPTION:

The MS1003 is a 12.5 V Class C epitaxial silicon NPN transistor

designed primarily for VHF, FM communications. Diffused

emitter resistors provide high VSWR capability under rated

operating conditions. Internal impedance matching ensures

optimum power gain and efficiency over the 136-175 MHz band.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

Collector-Base Voltage

36

V

Collector-Emitter Voltage

18

V

Collector-Emitter Voltage

36

V

Emitter-Base Voltage

4.0

V

Device Current

20

A

Power Dissipation

270

W

Junction Temperature

+200

°°C

Storage Temperature

-65 to +150

°°C

Thermal Data

Thermal Data

Junction-case Thermal Resistance

0.65

°°C/W

Features

• 175 MHz

• 12.5 VOLTS

• P

• G

• COMMON EMITTER CONFIGURATION