NTMFS3D1N04XM

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2

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction−to−Case (Note 2)

RqJC

3.79

°C/W

Thermal Resistance, Junction−to−Ambient (Notes 1, 2)

RqJA

41.6

1. Surface−mounted on FR4 board using 650 mm2, 2 oz Cu pad.

2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular

conditions noted.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 1 mA, TJ = 25°C

40

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

DV(BR)DSS/

DTJ

ID = 1 mA, Referenced to 25°C

15

mV/°C

Zero Gate Voltage Drain Current

IDSS

VDS = 40 V, TJ = 25°C

10

mA

VDS = 40 V, TJ = 125°C

100

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = 20 V

100

nA

ON CHARACTERISTICS

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V, ID = 20 A, TJ = 25°C

2.7

3.1

mW

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 40 mA, TJ = 25°C

2.5

3.5

V

Gate Threshold Voltage Temperature

Coefficient

DVGS(TH)/

DTJ

VGS = VDS, ID = 40 mA

−7.2

mV/°C

Forward Transconductance

gFS

VDS = 5 V, ID = 20 A

79.6

S

CHARGES & CAPACITANCES

Input Capacitance

CISS

VDS = 20 V, VGS = 0 V, f = 1 MHz

1002

pF

Output Capacitance

COSS

717

Reverse Transfer Capacitance

CRSS

18.4

Total Gate Charge

QG(TOT)

VDD = 20 V, ID = 50 A, VGS = 10 V

15.6

nC

Threshold Gate Charge

QG(TH)

2.94

Gate−to−Source Charge

QGS

4.82

Gate−to−Drain Charge

QGD

2.84

Gate Resistance

RG

f = 1 MHz

1.0

W

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

td(ON)

Resistive Load, VGS = 0/10 V,

VDD = 20 V, ID = 50 A, RG = 0 W

13.8

ns

Rise Time

tr

4.6

Turn−Off Delay Time

td(OFF)

18.8

Fall Time

tf

4.15

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V, IS = 20 A, TJ = 25°C

0.82

1.2

V

VGS = 0 V, IS = 20 A, TJ = 125°C

0.67

Reverse Recovery Time

tRR

VGS = 0 V, IS = 50 A,

di/dt = 100 A/ms, VDD = 20 V

29

ns

Charge Time

ta

11.3

ns

Discharge Time

tb

17.8

ns

Reverse Recovery Time

QRR

14.5

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Switching characteristics are independent of operating junction temperatures