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LD5523K
05/16/2018
11
Leadtrend Technology Corporation
www.leadtrend.com.tw
LD5523K-DS-00 May 2018
CS
VCC
GND
LD5523K
Can be removed if the negative
spike is not over spec. (-0.3V).
OUT
275ns
blanking
time
Fig. 13
CS
VCC
GND
LD5523K
RC filter is needed whenever the negative
spike is exceed - 0.3 V or the total spike
width is over 275 nS LEB period.
OUT
Fig. 14
Output Stage and Maximum Duty
An output stage of a CMOS buffer, with typical 350mA
driving capability, is incorporated to drive a power
MOSFET directly. The maximum duty of LD5523K is
limited to 81% avoid detecting QR fail.
CCM Switching Frequency Clamp
According to the QR operation principle, the switching
frequency is inversely proportional to the output power.
Therefore, as the output power increases, the switching
frequency can become rather low without limiting. The
CCM switching frequency of LD5523K is clamped at 65
kHz internally to provide the optimized operations by
considering the EMI performance, thermal treatment,
component sizes and transformer design
.
Over
Voltage
Protection
on
VCC
Pin
(VCC OVP) - Auto Recovery
The VGS ratings of the nowadays power MOSFETs are
often limited up to max. 28V. To prevent the VGS from the
fault condition, LD5523K is implemented with an OVP
function on VCC. Whenever the VCC voltage is higher
than the OVP threshold voltage, the output gate drive
circuit will be shutdown simultaneously thus to stop the
switching of the power MOSFET until the next UVLO(ON).
The VCC OVP function in LD5523K is an auto-recovery
type protection. The Fig. 15 shows its operation.
On the other hand, if the OVP condition is removed, the
VCC level will get back to normal level and the output will
automatically return to the normal operation.
VCC
UVLO(on)
UVLO(off)
t
OVP Tripped
t
OUT
Switching
Switching
Non-Switching
OVP Level
Fig. 15



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