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extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and

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IF35114.R00

IF4510

InterFET

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Technical

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IF4510 N-Channel JFET

Features

• InterFET N0450 Geometry

• Low Noise: 1.1 nV/√Hz Typical

• High Gain: 50mS Typical

• RoHS Compliant

• SMT, TH, and Bare Die Package options.

Applications

• Low-Noise, High Gain Amplifiers

Description

The -40V InterFET IF4510 JFET is targeted for low

noise high gain amplifier designs. The IF4510 has a

cutoff voltage of less than 1.5V ideal for low

voltage applications. The TO-72 package is

hermetically sealed and suitable for military

applications.

Product Summary

Parameters

IF4510 Min

Unit

BVGSS

Gate to Source Breakdown Voltage

-40

V

IDSS

Drain to Source Saturation Current

5

mA

VGS(off)

Gate to Source Cutoff Voltage

-0.35

V

GFS

Forward Transconductance

15

mS

Ordering Information Custom Part and Binning Options Available

Part Number

Description

Case

Packaging

IF4510T72

Through-Hole

TO-72

Bulk

IF4510ST3

Surface Mount

SOT23

Bulk

IF4510ST3TR

7“ Tape and Reel: Max 3,000 Pieces

13” Tape and Reel: Max 9,000 Pieces

SOT23

Minimum 1,000 Pieces

Tape and Reel

IF4510COT

Chip Orientated Tray (COT Waffle Pack)

COT

400/Waffle Pack

IF4510CFT

Chip Face-up Tray (CFT Waffle Pack)

CFT

400/Waffle Pack

1

2

3

Source

Drain

Gate

SOT23 Top View

TO-72 Bottom View

3

2

1

Gate

Source

Drain

4

Case