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SVT03380PSATR bảng dữ liệu(PDF) 3 Page - Silan Microelectronics Joint-stock

tên linh kiện SVT03380PSATR
Giải thích chi tiết về linh kiện  -6.5A, -30V P CHANNEL MOSFET
PDF  9 Pages
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nhà sản xuất  SILAN [Silan Microelectronics Joint-stock]
Trang chủ  http://www.silan.com.cn
Logo SILAN - Silan Microelectronics Joint-stock

SVT03380PSATR bảng dữ liệu(HTML) 3 Page - Silan Microelectronics Joint-stock

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Silan
Microelectronics
SVT03380PSA_Datasheet
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Rev.:1.0
http: //www.silan.com.cn
Page 3 of 9
ELECTRICAL CHARACTERISTICS (UNLESS OTHERWISE NOTED, TJ=25
C)
Static characteristics
Characteristics
Symbol
Test conditions
Ratings
Unit
Min.
Typ.
Max.
Drain-source Breakdown
Voltage
BVDSS
VGS=0V, ID=-250µA
-30
--
--
V
Drain-source Leakage
Current
IDSS
VDS=-30V, VGS=0V, TJ=25C
--
--
-1.0
µA
VDS=-30V, VGS=0V, TJ=125C
--
-0.3
-10
Gate-source Leakage
Current
IGSS
VGS=±20V, VDS=0V
--
--
±100
nA
Gate Threshold Voltage
VGS(th)
VGS=VDS, ID=-250µA
-1.5
--
-2.5
V
Static Drain-source
On State Resistance
RDS(on)
VGS=-10V, ID=-6.5A
--
24
38
m
VGS=-4.5V, ID=-5.0A
--
57
64
Gate Resistance
Rg
f=1MHz
--
26
--
Dynamic characteristics
Characteristics
Symbol
Test conditions
Ratings
Unit
Min.
Typ.
Max.
Input Capacitance
Ciss
f=1MHz, VGS=0V, VDS=-15V
--
666
--
pF
Output Capacitance
Coss
--
105
--
Reverse Transfer
Capacitance
Crss
--
72
--
Turn-on Delay Time
td(on)
VDD=-20V, VGS=-10V,
RG=3.0Ω, ID=-6.5A
(Notes 3, 4)
--
3.0
--
ns
Turn-on Rise Time
tr
--
41
--
Turn-off Delay Time
td(off)
--
43
--
Turn-off Fall Time
tf
--
50
--
Total Gate Charge
Qg
VDD=-15V, VGS=-10V, ID=-6.5A
(Notes 3, 4)
--
12
--
nC
Gate-source Charge
Qgs
--
3.6
--
Gate-drain Charge
Qgd
--
2.5
--
Gate-plateau Voltage
Vplateau
--
4.6
--
V
Reverse diode characteristics
Characteristics
Symbol
Test conditions
Ratings
Unit
Min.
Typ.
Max.
Continuous Source
Current
IS
TC=25C, Integral Reverse P-N
Junction Diode in the MOSFET
--
--
-6.5
A
Pulsed Source Current
IS,pulse
--
--
-26
Diode Forward Voltage
VSD
IS=-1.0A, VGS=0V
--
--
-1.4
V
Reverse Recovery Time
Trr
IS=-6.5A, VGS=0V,
dIF/dt=100A/µs
(Note 3)
--
11
--
ns
Reverse Recovery
Charge
Qrr
--
5.1
--
nC



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