Nexperia

PSC2065J

650 V, 20 A SiC Schottky diode in D2PAK R2P

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-c)

thermal resistance from

junction to case

-

1.2

1.5

K/W

aaa-039915

10-1

10-2

1

10

Zth(j-c)

(K/W)

10-3

tp (s)

10-6

10-1

1

10-2

10-3

10-5

10-4

duty cycle = 0.50

0.01

0.02

0.20

0.10

0.05

0

Fig. 1. Transient thermal impedance as a function of pulse duration; maximum values

Tc (°C)

25

75

125

175

200

150

100

50

aaa-039916

40

80

120

Ptot

(W)

0

Fig. 2. Power dissipation; maximum values

Tc (°C)

25

75

125

175

200

150

100

50

aaa-039917

40

80

120

Ptot

(W)

0

0.5

0.7

1.0

duty cycle = 0.1

0.3

Fig. 3. Forward current as a function of case

temperature; maximum values

PSC2065J

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Product data sheet

10 June 2024

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