EMF04P02V datasheet(4/7 Pages) EXCELLIANCE

tên linh kiện	EMF04P02V

Giải thích chi tiết về linh kiện	P-Channel Logic Level Enhancement Mode Field Effect Transistor

PDF	7 Pages

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nhà sản xuất	EXCELLIANCE [Excelliance MOS Corp.]

Trang chủ	http://www.excelliancemos.com/

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4 / 7 page

2019/6/25

p.4

EMF04P02V

-V - Drain-Source Voltage( V )

160

120

-3.0V

-2.5V

-4.0V

-3.5V

V = -4.5 V

Typical output characteristics

-1.8V

T = 25°C

- V - Gate-Source Voltage( V )

0.008

0.004

0.012

0.024

0.016

0.020

0.028

T = 125°C

I = - 20A

On-Resistance Variation with Gate-Source Voltage

= - 20 A

T - Junction Temperature (°C)

-50

0.4

0.7

1.0

-25

= - 4.5V

1.3

1.6

1.9

150

100

125

On-Resistance Variation with Temperature

-V - Gate-Source Voltage( V )

0.5

1.0

1.5

V = - 5V

2.5

2.0

3.0

125°C

25°C

Transfer Characteristics

T = -55°C

Body Diode Forward Voltage Variation

with Source Current and Temperature

25°C

T = 125°C

-V - Body Diode Forward Voltage( V )

0.001

0.01

0.1

0.4

0.2

0.6

V = 0V

100

1.0

0.8

1.2

-55°C

1.4

TYPICAL CHARACTERISTICS

-2.5V

-3.5V

-4.5V

VGS=-1.8V

150

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

- ID, DrainCurrent( A)

On-ResistanceVariationwithDrainCurrent andGateVoltage

120

-4.0V

-3.0V

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