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APTM120DA29TG bảng dữ liệu(PDF) 1 Page - Microsemi Corporation |
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APTM120DA29TG bảng dữ liệu(HTML) 1 Page - Microsemi Corporation |
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1 / 6 page  APTM120DA29TG www.microsemi.com 1 – 6 CR1 VBUS NTC2 0/VBUS VBUS SENSE G2 S2 NTC1 Q2 OUT VBUS OUT OUT NTC2 NTC1 0/VBUS S2 S2 G2 G2 VBUS SENSE Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 1200 V Tc = 25°C 34 ID Continuous Drain Current Tc = 80°C 25 IDM Pulsed Drain current 136 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 348 m Ω PD Maximum Power Dissipation Tc = 25°C 780 W IAR Avalanche current (repetitive and non repetitive) 22 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 1200V RDSon = 290mΩ typ @ Tj = 25°C ID = 34A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Boost chopper MOSFET Power Module |
Số phần tương tự - APTM120DA29TG |
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Mô tả tương tự - APTM120DA29TG |
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