APTM120A20DG datasheet(1/6 Pages) MICROSEMI

tên linh kiện	APTM120A20DG

Giải thích chi tiết về linh kiện	Phase leg with Series diodes MOSFET Power Module

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APTM120A20DG

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S1

G2

G1

S2

0/VBUS

OUT

VBUS

OUT

VBUS

S1

G1

0/VBUS

G2

S2

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Symbol

Parameter

Max ratings

Unit

VDSS

Drain - Source Breakdown Voltage

1200

V

Tc = 25°C

50

ID

Continuous Drain Current

Tc = 80°C

37

IDM

Pulsed Drain current

200

A

VGS

Gate - Source Voltage

±30

V

RDSon

Drain - Source ON Resistance

240

m

Ω

PD

Maximum Power Dissipation

Tc = 25°C

1250

W

IAR

Avalanche current (repetitive and non repetitive)

12

A

EAR

Repetitive Avalanche Energy

30

EAS

Single Pulse Avalanche Energy

1300

mJ

VDSS = 1200V

RDSon = 200mΩ typ @ Tj = 25°C

ID = 50A @ Tc = 25°C

Application

•

Zero Current Switching resonant mode

Features

•

Power MOS 7® MOSFETs

-

Low RDSon

-

Low input and Miller capacitance

-

Low gate charge

-

Fast intrinsic reverse diode

-

Avalanche energy rated

-

Very rugged

•

Kelvin source for easy drive

•

Very low stray inductance

-

Symmetrical design

-

M5 power connectors

•

High level of integration

Benefits

•

Outstanding performance at high frequency operation

•

Direct mounting to heatsink (isolated package)

•

Low junction to case thermal resistance

•

Low profile

•

RoHS Compliant

Phase leg

with Series diodes

MOSFET Power Module

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