APTM100UM65SAG datasheet(2/6 Pages) MICROSEMI

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APTM100UM65SAG

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All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

VGS = 0V,VDS= 1000V

Tj = 25°C

400

µA

IDSS

Zero Gate Voltage Drain Current

VGS = 0V,VDS= 800V

Tj = 125°C

RDS(on)

Drain – Source on Resistance

VGS = 10V, ID = 72.5A

Ω

VGS(th)

Gate Threshold Voltage

VGS = VDS, ID = 20mA

IGSS

Gate – Source Leakage Current

VGS = ±30 V, VDS = 0V

±400

Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Ciss

Input Capacitance

28.5

Coss

Output Capacitance

5.08

Crss

Reverse Transfer Capacitance

VGS = 0V

VDS = 25V

f = 1MHz

0.9

Total gate Charge

1068

Qgs

Gate – Source Charge

136

Qgd

Gate – Drain Charge

VGS = 10V

VBus = 500V

ID = 145A

692

Td(on)

Turn-on Delay Time

Rise Time

Td(off)

Turn-off Delay Time

140

Fall Time

VGS = 15V

VBus = 500V

ID = 145A

RG = 0.75Ω

Eon

Turn-on Switching Energy

4.8

Eoff

Turn-off Switching Energy

Inductive switching @ 25°C

VGS = 15V, VBus = 670V

ID = 145A, RG = 0.75Ω

2.9

Eon

Turn-on Switching Energy

Eoff

Turn-off Switching Energy

Inductive switching @ 125°C

VGS = 15V, VBus = 670V

ID = 145A, RG = 0.75Ω

3.9

Series diode ratings and characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

VRRM

Maximum Peak Repetitive Reverse Voltage

200

Tj = 25°C

350

IRM

Maximum Reverse Leakage Current

VR=200V

Tj = 125°C

600

µA

DC Forward Current

Tc = 80°C

120

IF = 120A

1.1

1.15

IF = 240A

1.4

Diode Forward Voltage

IF = 120A

Tj = 125°C

0.9

Tj = 25°C

trr

Reverse Recovery Time

Tj = 125°C

Tj = 25°C

120

Qrr

Reverse Recovery Charge

IF = 120A

VR = 133V

di/dt = 400A/µs

Tj = 125°C

500

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