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APTM100A13SCG bảng dữ liệu(PDF) 1 Page - Microsemi Corporation |
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APTM100A13SCG bảng dữ liệu(HTML) 1 Page - Microsemi Corporation |
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1 / 7 page  APTM100A13SCG www.microsemi.com 1 – 7 OUT S1 G2 S2 G1 Q2 0/VBUS VBUS Q1 OUT VBUS S1 G1 0/VBUS G2 S2 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 1000 V Tc = 25°C 65 ID Continuous Drain Current Tc = 80°C 49 IDM Pulsed Drain current 240 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 156 m Ω PD Maximum Power Dissipation Tc = 25°C 1250 W IAR Avalanche current (repetitive and non repetitive) 24 A EAR Repetitive Avalanche Energy 30 EAS Single Pulse Avalanche Energy 1300 mJ VDSS = 1000V RDSon = 130mΩ typ @ Tj = 25°C ID = 65A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant Phase leg Series & SiC parallel diodes MOSFET Power Module |
Số phần tương tự - APTM100A13SCG |
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Mô tả tương tự - APTM100A13SCG |
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