15NM60-U3

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R205-964.a



ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250μA

600

V

Drain-Source Leakage Current

IDSS

VDS=600V, VGS=0V

10

μA

Gate-Source Leakage Current

IGSS

VGS=±30V, VDS=0V

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250μA

2.5

4.5

V

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=7.5A

0.36

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VGS=0V, VDS=50V, f=1MHz

870

pF

Output Capacitance

COSS

90

pF

Reverse Transfer Capacitance

CRSS

5

pF

SWITCHING CHARACTERISTICS

Total Gate Charge

QG

VDS=480V, VGS=10V, ID=15A

(Note 1, 2)

45

nC

Gate-Source Charge

QGS

13

nC

Gate-Drain Charge

QDD

16

nC

Turn-On Delay Time

tD(ON)

VDD=100V, VGS=10V, ID =15A,

RG =25Ω (Note 1, 2)

8

ns

Turn-On Rise Time

tR

24

ns

Turn-Off Delay Time

tD(OFF)

100

ns

Turn-Off Fall Time

tF

44

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Continuous Drain-Source Diode

Forward Current

IS

15

A

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

45

A

Drain-Source Diode Forward Voltage

VSD

IS=15A, VGS=0V

1.4

V

Body Diode Reverse Recovery Time

trr

IS=15A, VGS=0V,

dIF/dt=100A/µs

352

nS

Body Diode Reverse Recovery Charge

Qrr

4.4

μC

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.

2. Essentially independent of operating temperature.