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7/19

Rev.0.3

Single-ChannelIsolatedGateDriver

BTD5350x

SWITCHINGPARAMETERS

tPLH Propagation delay, high

CL=100pF

-

60 75

ns

tPHL Propagation delay, low

CL=100pF

-

60 75

tr Output-signal rise time

CL=1nF

-

10 26

tf Output-signal fall time

CL=1nF

-

10 26

tPWD Pulse width distortion[tPHL-tPLH]

CL=100pF

-

1

20

tsk 2） Part-to-part skew

CL=100pF

-

1

25

tUVLO1-rec Undervoltage lockout

recovery delay time

Input side

VCC1

-

50

-

µs

tUVLO2-rec

Output side

VCC2

-

50

-

CMTI Common-mode transient immunity

INx tied to GND or VCC1, VCM=1500V

150

-

- kV/µs

Note: 1. CL: Load capacitance from output pin OUTx to VEE2 or GND2.

2. tsk is the magnitude of the difference in propagation delay times between the output of different devices switching in the same

direction while operating at identical supply voltages, temperature, input signals and loads guaranteed by characterization.

(Continued)

7.6InsulationSpecifications

SYMBOL

PARAMETER

TESTCONDITIONS

MIN TYP MAX UNIT

CLR External Clearance

-

4

-

- mm

CPG External Creepage

-

4

-

-

DTI Distance through the insulation

-

17 -

- µm

CTI Comparative tracking index

DIN EN 60112

600 -

-

V

Overvoltage category per IEC 60664-1 Rated mains voltage≤150Vrms

I-IV -

-

-

Rated mains voltage≤300Vrms

I- III -

-

DINVDEV0884-11

VIORM Maximum repetitive peak isolation voltage AC voltage (bipolar)

990 -

- VPK

VIOWM Maximum isolation working voltage

AC voltage (sine wave); time dependent

dielectric breakdown (TDDB) test

700 -

- Vrms

VIOTM Maximum transient isolation voltage VTEST=VIOTM=VISO, t=60s（qualification）;

VTEST=VIOTM=1.2×VISO, t=1s (100% production) 4242 -

- V

PK

VIOSM Maximum surge isolation voltage

Test method per IEC 62368-1, 1.2/50-μs

waveform, VTEST=1.3×VIOSM（qualification）

4242 -

-

qpd Apparent charge

Method a: After I/O safety test subgroup 2/3,

Vini=VIOTM, tini=60s, Vpd(m)=1.2×VIORM, tm=10s

-

-

5

pC

Method a: After environmental tests subgroup 1,

Vini=VIOTM, tini=60s, Vpd(m)=1.2×VIORM, tm=10s

-

-

5

Method b1: At routine test (100% production)

and preconditioning (type test), Vini=1.2×VIOTM,

tini=1s, Vpd(m)=1.5×VIORM, tm=1s

-

-

5

CIO Barrier capacitance, input to output

VIO=0.4×sin(2πft), f=1MHz

- 1.2 - pF

RIO Isolation resistance, input to output

Test voltage of 500V, TA=25℃

1012 -

-

Ω

Test voltage of 500V, 100℃≤TA≤125℃

1011 -

-

Test voltage of 500V, TS=150℃

109 -

-

Pollution degree

-

-

2

-

-

UL1577

VISO Withstand isolation voltage

VTEST=VISO, t=60s（qualification）; VTEST=1.2×VISO,

t=1s (100% production)

3000 -

- Vrms

7.6.1SOP-8SafetyParameters