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APTC80AM75SCG bảng dữ liệu(PDF) 1 Page - Microsemi Corporation

tên linh kiện APTC80AM75SCG
Giải thích chi tiết về linh kiện  Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module
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nhà sản xuất  MICROSEMI [Microsemi Corporation]
Trang chủ  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTC80AM75SCG bảng dữ liệu(HTML) 1 Page - Microsemi Corporation

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APTC80AM75SCG
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OUT
S1
G2
S2
G1
Q2
0/VBUS
VBUS
Q1
OUT
VBUS
S1
G1
0/VBUS
G2
S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
800
V
Tc = 25°C
56
ID
Continuous Drain Current
Tc = 80°C
43
IDM
Pulsed Drain current
232
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
75
m
PD
Maximum Power Dissipation
Tc = 25°C
568
W
IAR
Avalanche current (repetitive and non repetitive)
17
A
EAR
Repetitive Avalanche Energy
0.5
EAS
Single Pulse Avalanche Energy
670
mJ
VDSS = 800V
RDSon = 75mΩ max @ Tj = 25°C
ID = 56A @ Tc = 25°C
Application
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
Parallel SiC Schottky Diode
-
Zero reverse recovery
-
Zero forward recovery
-
Temperature Independent switching behavior
-
Positive temperature coefficient on VF
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Phase leg
Series & SiC parallel diodes
Super Junction
MOSFET Power Module


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