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APT34N80LC3 bảng dữ liệu(PDF) 5 Page - Microsemi Corporation |
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APT34N80LC3 bảng dữ liệu(HTML) 5 Page - Microsemi Corporation |
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5 / 5 page ![]() APT34N80B2C3_LC3 Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. T J = 125 C 90% Drain Voltage Gate Voltage Drain Current 0 90% t d(off) 10% tf Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions IC D.U.T. APT15DF100 VCE Figure 20, Inductive Switching Test Circuit VDD G TJ = 125 C Drain Voltage Gate Voltage Drain Current 10 % t d(on) 10 % 5 % 5 % 90% t r Switching Energy 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) BSC 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) Drain Source Gate These dimensions are equal to the TO-247 without the mounting hole. 2-Plcs. 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) Drain Source Gate Dimensions in Millimeters and (Inches) 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) T-MAXTM (B2) Package Outline TO-264 (L) Package Outline |
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