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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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LT1167 bảng dữ liệu(PDF) 2 Page - Linear Technology |
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LT1167 bảng dữ liệu(HTML) 2 Page - Linear Technology |
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2 / 20 page  2 LT1167 ORDER PART NUMBER S8 PART MARKING LT1167ACN8 LT1167ACS8 LT1167AIN8 LT1167AIS8 LT1167CN8 LT1167CS8 LT1167IN8 LT1167IS8 1167A 1167AI 1 2 3 4 8 7 6 5 TOP VIEW RG –IN +IN –VS RG +VS OUTPUT REF N8 PACKAGE 8-LEAD PDIP S8 PACKAGE 8-LEAD PLASTIC SO + – TJMAX = 150°C, θJA = 130°C/ W (N8) TJMAX = 150°C, θJA = 190°C/ W (S8) 1167 1167I VS = ±15V, VCM = 0V, TA = 25°C, RL = 2k, unless otherwise noted. LT1167AC/LT1167AI (Note 1) Supply Voltage ...................................................... ±20V Differential Input Voltage (Within the Supply Voltage) ..................................................... ±40V Input Voltage (Equal to Supply Voltage) ................ ±20V Input Current (Note 3) ........................................ ±20mA Output Short-Circuit Duration .......................... Indefinite Operating Temperature Range ................ – 40 °C to 85°C Specified Temperature Range LT1167AC/LT1167C (Note 4) .................. 0 °C to 70°C LT1167AI/LT1167I ............................. – 40 °C to 85°C Storage Temperature Range ................. – 65 °C to 150°C Lead Temperature (Soldering, 10 sec).................. 300 °C ABSOLUTE AXI U RATI GS PACKAGE/ORDER I FOR ATIO ELECTRICAL CHARACTERISTICS Consult factory for parts specified with wider operating temperature ranges. LT1167C/LT1167I SYMBOL PARAMETER CONDITIONS (Note 7) MIN TYP MAX MIN TYP MAX UNITS G Gain Range G = 1 + (49.4k/RG) 1 10k 1 10k Gain Error G = 1 0.008 0.02 0.015 0.03 % G = 10 (Note 2) 0.010 0.08 0.020 0.10 % G = 100 (Note 2) 0.025 0.08 0.030 0.10 % G = 1000 (Note 2) 0.040 0.10 0.040 0.10 % Gain Nonlinearity (Note 5) VO = ±10V, G = 1 1 6 1.5 10 ppm VO = ±10V, G = 10 and 100 2 10 3 15 ppm VO = ±10V, G = 1000 15 40 20 60 ppm VO = ±10V, G = 1, RL = 600 5 12 6 15 ppm VO = ±10V, G = 10 and 100, 6 15 7 20 ppm RL = 600 VO = ±10V, G = 1000, 20 65 25 80 ppm RL = 600 VOST Total Input Referred Offset Voltage VOST = VOSI + VOSO/G VOSI Input Offset Voltage G = 1000, VS = ±5V to ±15V 15 40 20 60 µV VOSO Output Offset Voltage G = 1, VS = ±5V to ±15V 40 200 50 300 µV IOS Input Offset Current 90 320 100 450 pA IB Input Bias Current 50 350 80 500 pA en Input Noise Voltage (Note 8) 0.1Hz to 10Hz, G = 1 2.00 2.00 µVP-P 0.1Hz to 10Hz, G = 10 0.50 0.50 µVP-P 0.1Hz to 10Hz, G = 100 and 1000 0.28 0.28 µVP-P Total RTI Noise = √eni2 + (eno/G)2 (Note 8) eni Input Noise Voltage Density (Note 8) fO = 1kHz 7.5 12 7.5 12 nV/ √Hz eno Output Noise Voltage Density (Note 8) fO = 1kHz (Note 3) 67 90 67 90 nV/ √Hz |
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