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ZXMS6004DN8Q bảng dữ liệu(PDF) 2 Page - Diodes Incorporated

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Giải thích chi tiết về linh kiện  60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET
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nhà sản xuất  DIODES [Diodes Incorporated]
Trang chủ  http://www.diodes.com
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ZXMS6004DN8Q bảng dữ liệu(HTML) 2 Page - Diodes Incorporated

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ZXMS6004DN8Q
Document number: DS38898 Rev. 1 - 2
2 of 9
www.diodes.com
June 2016
© Diodes Incorporated
ZXMS6004DN8Q
Functional Block Diagram
Application Information
Two Completely Isolated Independent Channels
Especially Suited for loads with a High In-Rush Current such as Lamps and Motors
All Types of Resistive, Inductive and Capacitive Loads in Switching Applications
μC Compatible Power Switch for 12V and 24V DC Applications
Replaces Electromechanical Relays and Discrete Circuits
Linear Mode Capability
— the current-limiting protection circuitry is designed to deactivate at low VDS to minimize on-state power dissipation
The maximum DC operating current is therefore determined by the thermal capability of the package or board combination, rather than by the
protection circuitry. This does not compromise the product’s ability to self-protect at low VDS.
Absolute Maximum Ratings (@TA = +25°C, unless otherwise stated.)
Characteristic
Symbol
Value
Units
Continuous Drain-Source Voltage
VDS
60
V
Drain-Source Voltage For Short-Circuit Protection
VDS(SC)
36
V
Continuous Input Voltage
VIN
-0.5 to +6
V
Continuous Input Current @ -
0.2V ≤ VIN ≤ 6V
Continuous Input Current @VIN < -0.2V or VIN > 6V
IIN
No limit
│IIN │≤2
mA
Pulsed Drain Current @VIN = 3.3V
IDM
2
A
Pulsed Drain Current @VIN = 5V
IDM
2.5
A
Continuous Source Current (Body Diode) (Note 6)
IS
1
A
Pulsed Source Current (Body Diode)
ISM
5
A
Unclamped Single Pulse Inductive Energy,
TJ = +25°C, ID = 0.5A, VDD = 24V
EAS
120
mJ
Electrostatic Discharge (Human Body Model)
VHBM
4,000
V
Charged Device Model
VCDM
1,000
V



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