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ZXMS6004DGQTA bảng dữ liệu(PDF) 4 Page - Diodes Incorporated |
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ZXMS6004DGQTA bảng dữ liệu(HTML) 4 Page - Diodes Incorporated |
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4 / 8 page ![]() ZXMS6004DGQ Document number: DS37149 Rev. 5 - 2 4 of 8 www.diodes.com July 2018 © Diodes Incorporated ZXMS6004DGQ Electrical Characteristics (@TA = +25°C, unless otherwise stated.) Characteristic Symbol Min Typ Max Unit Test Condition Static Characteristics Drain-Source Clamp Voltage VDS(AZ) 60 65 70 V ID = 10mA Off State Drain Current IDSS – – 0.5 μA VDS = 12V, VIN = 0V – – 1 VDS = 36V, VIN = 0V Input Threshold Voltage VIN(TH) 0.7 1.2 1.5 V VDS = VGS, ID = 1mA Input Current IIN – 60 100 μA VIN = 3V – 120 200 VIN = 5V Input Current While Over Temperature Active – – – 400 μA VIN = 5V Static Drain-Source On-State Resistance RDS(ON) – 400 600 mΩ VIN = 3V, ID = 0.5A – 350 500 VIN = 5V, ID = 0.5A Continuous Drain Current (Note 6) ID 0.9 – – A VIN = 3V; TA = +25°C 1.0 – – VIN = 5V; TA = +25°C Continuous Drain Current (Note 7) 1.2 – – VIN = 3V; TA = +25°C 1.3 – – VIN = 5V; TA = +25°C Current Limit (Note 9) ID(LIM) 0.7 1.7 – A VIN = 3V 1 2.2 – VIN = 5V Dynamic Characteristics Turn On Delay Time tD(ON) – 5 – μs VDD = 12V, ID = 0.5A, VGS = 5V Rise Time tR – 10 – Turn Off Delay Time tD(OFF) – 45 – Fall Time fF – 15 – Over-Temperature Protection Thermal Overload Trip Temperature (Note 10) TJT +150 +175 – °C – Thermal Hysteresis (Note 10) – – +10 – °C – Notes: 9. The drain current is restricted only when the device is in saturation (see graph „typical output characteristic‟). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. 10. Over- temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal operating range, so this part is not designed to withstand over-temperature for extended periods. |
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