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S71PL129JC0 bảng dữ liệu(PDF) 114 Page - SPANSION

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Giải thích chi tiết về linh kiện  Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory
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S71PL129JC0/S71PL129JB0/S71PL129JA0
S71PL129Jxx_00_A8 October 28, 2005
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Info rmation
Power Savings Modes (For 16M Page Mode, 32M and 64M Only)
There are several power savings modes.
Partial Array Self Refresh
Temperature Compensated Refresh (64M)
Deep Sleep Mode
Reduced Memory Size (32M, 16M)
The operation of the power saving modes ins controlled by the settings of bits
contained in the Mode Register. This definition of the Mode Register is shown in
Figure 39 and the various bits are used to enable and disable the various low
power modes as well as enabling Page Mode operation. The Mode Register is set
by using the timings defined in Figure xxx.
Partial Array Self Refresh (PAR)
In this mode of operation, the internal refresh operation can be restricted to a
16Mb, 32Mb, or 48Mb portion of the array. The array partition to be refreshed is
determined by the respective bit settings in the Mode Register. The register set-
tings for the PASR operation are defined in Table xxx. In this PASR mode, when
ZZ# is active low, only the portion of the array that is set in the register is re-
Figure 38. Timing Waveform of Page Mode Write Cycle (ZZ# = VIH)
Page A ddr es s
(A4 - A 20)
LB#, UB#
WE#
tWP
tCW
tDW
High-Z
Dat a Out
tLBW, tUBW
CE#
Wor d A ddr es s
(A0 - A3 )
tWC
tPWC
tDH
tPDW tPDH
tPDW
tPDH
tAS
tPGMAX



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