6.6 Electrical Characteristics (continued)

Over operating junction temperature (TJ = -40 °C to +125 °C) and VIN = 2.75 V to 6 V. Typical values at VIN = 5 V and TJ = 25

°C. (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

RDS(ON)

Low-Side MOSFET ON-Resistance

VIN ≥ 5 V

15

35

mΩ

RDP

Dropout resistance

100% mode. Maximum value at VIN =

3.3V, TJ = 85°C

50

90

mΩ

ILIMH

High-Side MOSFET Current Limit (1)

TPSM82810; VIN = 3 V to 6 V

4.8

5.6

6.55

A

ILIMH

High-Side MOSFET Current Limit(1)

TPSM82813; VIN = 3V to 6 V

3.9

4.5

5.25

A

ILIMNEG

Negative Current Limit (1)

MODE/SYNC = HIGH

-1.8

A

fS

PWM Switching Frequency Range

1.8

2.25

4

MHz

fS

PWM Switching Frequency

with COMP/FSET tied to VIN or GND

2.025

2.25

2.475

MHz

PWM Switching Frequency Tolerance

using a resistor from COMP/FSET to

GND

-19%

18%

ton,min

Minimum on-time

VIN = 3.3 V

50

75

ns

toff,min

Minimum off-time

VIN = 3.3 V

30

ns

OUTPUT

VFB

Feedback Voltage Accuracy

VIN ≥ VOUT + 1 V; PWM mode

594

600

606

mV

VIN ≥ VOUT + 1 V; PFM mode

VOUT ≥ 1.5 V; COUT,eff ≥ 27μF

594

600

612

mV

1 V ≤ VOUT < 1.5 V; PFM

mode COUT,eff ≥ 47μF

594

600

615

mV

ILKG_FB

Input Leakage Current (FB pin)

VFB = 0.6 V

1

70

nA

VFB

Feedback Voltage Accuracy with

Voltage Tracking

VIN ≥ VOUT + 1 V; PWM mode

VSS/TR = 0.3 V

297

300

321

mV

Rdis

Output Discharge Resistance

30

50

Ω

tdelay

Start-up Delay Time

IOUT = 0 mA, Time from EN=high to

start switching; VIN applied already

135

200

450

µs

tramp

Ramp time; SS/TR Pin Open

IOUT = 0 mA, Time from first switching

pulse until 95% of nominal output

voltage

100

150

200

µs

(1)

This is the static current limit. It can be temporarily higher in applications due to internal propagation delay (see Current Limit And

Short Circuit Protection section).

TPSM82810, TPSM82813

SLUSDN6B – SEPTEMBER 2019 – REVISED JULY 2024

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