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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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IRGI4061DPBF bảng dữ liệu(PDF) 2 Page - International Rectifier |
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IRGI4061DPBF bảng dữ liệu(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRGI4061DPbF 2 www.irf.com Notes: VCC = 80% (VCES), VGE = 15V, L = 28 µH, RG = 22 Ω. Pulse width limited by max. junction temperature. Rθ is measured at TJ approximately 90°C Refer to AN-1086 for guidelines for measuring V(BR)CES safely Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V,Ic =100 µA f ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —0.75 — V/°C VGE = 0V, Ic = 250 µA ( -55 -150 oC ) f — 1.35 1.59 IC = 11A, VGE = 15V, TJ = 25°C VCE(on) Collector-to-Emitter Saturation Voltage — 1.53 — IC = 11A, VGE = 15V, TJ = 125°C —1.58 — IC = 11A, VGE = 15V, TJ = 150°C VGE(th) Gate Threshold Voltage 4.0 6.5 V VCE = VGE, IC = 500 µA ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -15 —mV/°C VCE = VGE, IC = 1.0mA ( 25 -150 oC ) gfe Forward Transconductance — 11 — S VCE = 50V, IC = 11A, PW =80µs ICES — 2.0 25 µA VGE = 0V,VCE = 600V — 550 —µA VGE = 0v, VCE = 600V, TJ =150°C VFM — 1.84 2.05 V IF = 11A —1.33 — IF = 11A, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ± 20 V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge (turn-on) — 35 53 IC = 11A Qge Gate-to-Emitter Charge (turn-on) — 8.0 12 nC VCC = 400V Qgc Gate-to-Collector Charge (turn-on) — 13 23 VGE = 15V Eon Turn-On Switching Loss — 52 95 IC = 11A, VCC = 400V, VGE = 15V Eoff Turn-Off Switching Loss — 231 340 µJ RG = 22Ω, L=1mH, LS= 150nH, TJ = 25°C Etotal Total Switching Loss — 283 435 Energy losses include tail and diode reverse recovery td(on) Turn-On delay time — 37 46 IC = 11A, VCC = 400V tr Rise time — 18 26 ns RG = 22Ω, L=1mH, LS= 150nH td(off) Turn-Off delay time — 111 129 TJ = 25°C tf Fall time — 30 41 Eon Turn-On Switching Loss — 143 — IC = 11A, VCC = 400V, VGE = 15V Eoff Turn-Off Switching Loss — 316 — µJ RG = 22Ω, L=1mH, LS= 150nH, TJ = 150°C Etotal Total Switching Loss — 459 — Energy losses include tail and diode reverse recovery td(on) Turn-On delay time — 35 — IC = 11A, VCC = 400V tr Rise time — 19 —ns RG = 22Ω, L=1mH, LS= 150nH td(off) Turn-Off delay time — 134 —TJ = 150°C tf Fall time — 45 — Cies Input Capacitance — 1050 — VGE = 0V Coes Output Capacitance — 89 — VCC = 30V Cres Reverse Transfer Capacitance — 30 — f = 1Mhz TJ = 150°C, IC = 40A RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V Rg = 22 Ω, VGE = +15V to 0V VCC = 400V, Vp =600V RG = 22Ω, VGE = +15V to 0V Erec Reverse recovery energy of the diode — 211 — µJ TJ = 150 oC trr Diode Reverse recovery time — 60 — ns VCC = 400V, IF = 11A Irr Peak Reverse Recovery Current — 18 — A VGE = 15V, Rg = 22Ω, L=1mH, LS=150nH µs pF Conditions V — Diode Forward Voltage Drop Collector-to-Emitter Leakage Current SCSOA Short Circuit Safe Operating Area 5 — |
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