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SSR20C20CT bảng dữ liệu(PDF) 1 Page - Solid States Devices, Inc |
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SSR20C20CT bảng dữ liệu(HTML) 1 Page - Solid States Devices, Inc |
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1 / 2 page ![]() Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SSR20C 30 CT S.5 TX │ │ │ │ │ │ │ │ │ │ │ │ └ Screening __ = Not Screened TV = TX Level TXV= TXV Level S = S Level │ │ │ │ └ Package 2/ S.5 = SMD.5 G = Cerpack J = TO-257 │ │ └ Configuration CT = Centertap └ Voltage 20 = 200 V 30 = 300 V World’s First Silicon Carbide Centertap Rectifier SSR20C30CT Series 20A / 300V Schottky Silicon Carbide Centertap Rectifier Features: • World's 1st Hermetic 20A SiC Centertap Rectifier • High Voltage 300V • Very High Operating Temperature, 250ºC • No Recovery Time (tfr or trr) • High Current Operation, 20A • Hermetic Packaging • TX, TXV, S Level Screening Available Maximum Ratings Symbol Value Units Peak Repetitive and Peak Surge Reverse Voltage SSR20C20CT SSR20C30CT VRRM VRSM 200 300 Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave) Per Leg Total Io 10 20 Amps Non Repetitive Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on IO, per leg) IFSM 18 Amps Power Dissipation PD 30 Watts Operating & Storage Temperature TOP & Tstg -55 to +250 ºC Maximum Thermal Resistance Junction to Case RθJC 2.2 ºC/W 1 Cerpack (G) SMD .5 (S.5) TO-257 (J) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RS0028D DOC |
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