NXP Semiconductors

AFSC5G26F38

Airfast Power Amplifier Module

Rev. 3 — 14 June 2024

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Product data sheet

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AFSC5G26F38

E 2024 NXP B.V. All rights reserved.

9 Electrical characteristics

9.1 DC characteristics

Table 7. DC Characteristics

(TA = 25°C unless otherwise noted)

Characteristic

Symbol

Typ

Range

Unit

Carrier Stage 1 — On Characteristics

Gate Threshold Voltage (1)

(VDS = 10 Vdc, ID = 1.2 μAdc)

VGS(th)

1.2

±0.4

Vdc

Gate Quiescent Voltage

(VDS = 30 Vdc, IDQ1A = 12 mAdc)

VGS(Q)

1.9

±0.4

Vdc

Fixture Gate Quiescent Voltage

(VDD = 30 Vdc, IDQ1A = 12 mAdc, Measured in Functional Test)

VGG(Q)

4.9

±1.4

Vdc

Carrier Stage 2 — On Characteristics

Gate Threshold Voltage (1)

(VDS = 10 Vdc, ID = 12 μAdc)

VGS(th)

1.2

±0.4

Vdc

Gate Quiescent Voltage

(VDS = 30 Vdc, IDQ2A = 48 mAdc)

VGS(Q)

1.8

±0.4

Vdc

Fixture Gate Quiescent Voltage

(VDD = 30 Vdc, IDQ2A = 48 mAdc, Measured in Functional Test)

VGG(Q)

2.8

±1.2

Vdc

Peaking Stage 1 — On Characteristics (1)

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 1.6 μAdc)

VGS(th)

1.2

±0.4

Vdc

Gate Quiescent Voltage

(VDS = 30 Vdc, IDQ1A = 7 μAdc)

VGS(Q)

1.2

±0.4

Vdc

Fixture Gate Quiescent Voltage

(VDD = 30 Vdc, IDQ1A = 7 μAdc, Measured in Functional Test)

VGG(Q)

1.2

±0.4

Vdc

Peaking Stage 2 — On Characteristics (1)

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 30.4 μAdc)

VGS(th)

1.2

±0.4

Vdc

Gate Quiescent Voltage

(VDS = 30 Vdc, IDQ2A = 24 μAdc)

VGS(Q)

1.2

±0.4

Vdc

Fixture Gate Quiescent Voltage

(VDD = 30 Vdc, IDQ2A = 24 μAdc, Measured in Functional Test)

VGG(Q)

1.2

±0.4

Vdc

1. Each side of device measured separately.

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