2

Date: 1/19/05

SPX4040 Micropower 2.5V Shunt Voltage Reference

© Copyright 2005 Sipex Corporation

ABSOLUTE MAXIMUM RATINGS

Anode-Cathode Forward Current, (<10ms) I

Anode-Cathode Reverse Current I

Continuous Power Dissipation at 25°C P

D

TO-92 ..................................................................... 550mW

SOT-23 .................................................................. 300 mW

SOIC-8 .................................................................... 525mW

Junction Temperature T

Storage Temperature T

NOTE: Stresses greater than those listed under ABSOLUTE MAXIMUM

RATINGS may cause permanent damage to the device. This is a stress

rating only and functional operation of the device at these or any other

conditions above those indicated in the operational sections of this

specification is not implied. Exposure to absolute maximum rating condi-

tions for extended periods may affect reliability.

TYPICAL THERMAL RESISTANCES

PACKAGE

TYPICAL DERATING

TO-92

160°C/W 80°C/W

6.3 mW/°C

SOT-23

575°C/W 150°C/W

1.7 mW/°C

SOIC-8

175°C/W 45°C/W

5.7 mW/°C

Typical deratings of the thermal resistances are given for ambient

temperature >25°C.

PARAMETERS

CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

UNITS

SPX4040A-2.5

SPX4040-2.5

Reverse Breakdown

2.4875

2.500 2.5125

2.475

2.500

2.525

V

Voltage

Reverse Breakdown

±12

±25

mV

Tolerance

±29

±49

mV

Output Impedance

0.60

0.8

0.60

0.8

Ω

Noise Voltage

0.1KHz≤f≤10Hz

15

15

µV p-p

Tempco

Note 1

100

100

ppm/°C

Turn-on Setting

30

30

µSec

Operating Current Range Note 2

0.16

15

0.16

15

mA

Temp. Range (ambient)

-40

85

-40

85

°C

075

85

-10

0.5

5000

0

00

0.07 mV/

°C

0.003 %/

°C

27 ppm/

°C

TC in mV/

°C=

TC in % /

°C=

(mV)

∆T

A

∆T

A

at 25

°C

x 100

()

TC in ppm/

°C=

at 25

°C

()

ppm

%

mV

Junction Temperature (

°C)

∆ T

15

45

60

30

CALCULATING AVERAGE TEMPERATURE COEFFICIENT (TC)

Figure 1. V

Notes:

1. Three-point measurement guarantees the error band over the specified temperature range.

2. Optimum performance is obtained at current below 1000

µA.

Electrical characteristics at I

ELECTRICAL CHARACTERISTICS