NXP Semiconductors

A3M34TL139

Airfast Power Amplifier Module

Rev. 1 — 14 June 2024

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Product data sheet

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A3M34TL139

E 2024 NXP B.V. All rights reserved.

9.4 Typical performance

Table 11. Typical Performance (1)

(In NXP Doherty Power Amplifier Module Reference Circuit, TA = 25°C unless otherwise noted, 50 ohm system) VDD = 27 Vdc,

IDQ1A = 23 mA, IDQ2A = 76 mA, VGSP1 = 1.30 Vdc, VGSP2 = 1.15 Vdc, Pout = 7 W Avg., 3440 MHz

Characteristic

Symbol

Min

Typ

Max

Unit

VBW Resonance Point, 2−tone, 1 MHz Tone Spacing

(IMD Third Order Intermodulation Inflection Point)

VBWres

—

300

—

MHz

Quiescent Current Accuracy over Temperature (2)

with 2.2 kΩ Gate Feed Resistors (–40°C to +105°C) Stage 1

with 2.2 kΩ Gate Feed Resistors (–40°C to +105°C) Stage 2

ΔIQT

—

—

4.6

4.3

—

—

%

1−carrier 20 MHz LTE, 8 dB Input Signal PAR

Gain

G

—

27.7

—

dB

Power Added Efficiency

PAE

—

39.8

—

%

Adjacent Channel Power Ratio

ACPR

—

–28.2

—

dBc

Adjacent Channel Power Ratio

ALT1

—

–39.4

—

dBc

Adjacent Channel Power Ratio

ALT2

—

–48.4

—

dBc

Gain Flatness (3)

GF

—

0.5

—

dB

Fast CW, 27 ms Sweep

Pout @ 3 dB Compression Point

P3dB

—

47.4

—

dBm

AM/PM @ P3dB

Φ

—

–31

—

°

Gain Variation @ Avg. Power over Temperature

(–40°C to +105°C)

ΔG

—

0.028

—

dB/°C

P3dB Variation over Temperature

(–40°C to +105°C)

P3dB

—

0.007

—

dB/°C

10 Ordering information

Table 12. Ordering Information

Device

Tape and Reel Information

Package

A3M34TL139T2

T2 Suffix = 2,000 Units, 24 mm Tape Width, 13−inch Reel

10 mm × 6 mm Module

1. All data measured in fixture with device soldered in NXP reference circuit.

2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current

Control for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.

3. Gain flatness = Max(G(fLow to fHigh)) – Min(G(fLow to fHigh))

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