4-431
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
1
2
3
6
5
4
VCC
GND
RF IN
RF OUT
GND
GC
ATT
ATT
RF2377
PCS/CELLULAR TDMA/CDMA/W-CDMA
LINEAR VARIABLE GAIN AMPLIFIER
• CDMA PCS/Cellular Handsets
• TDMA PCS/Cellular Handsets
• W-CDMA Handsets
The RF2377 is a linear variable gain amplifier suitable for
use in TDMA and CDMA systems in the cellular or PCS
band and for W-CDMA systems. The features of this
device include linear gain control, high gain, and high lin-
earity. The IC is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (GaAs HBT)
process and is featured in an industry-standard miniature
6-lead plastic SOT package.
• 50dB Linear Gain Control Range
• 24dB Maximum Gain
• Single 2.7V to 3.3V Supply
• 45mA Supply Current
• High Linearity
RF2377
PCS/Cellular TDMA/CDMA/W-CDMA Linear Vari-
able Gain Amplifier
RF2377-410 PCBAFully Assembled Evaluation Board, PCS
RF2377-411 PCBAFully Assembled Evaluation Board, W-CDMA
0
Rev A11 020607
0.10
MAX.
0.90
0.70
1.30
1.00
1.90
3.10
2.70
0.50
0.35
3.00
2.60
1.80
1.40
9°
1°
0.25
0.10
0.37 MIN.
Shaded lead is pin 1.
Dimensions in mm.
*When Pin 1 is in upper left,
text reads downward
(as shown).
Package Style: SOT23-6
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