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PESDNC2FD5VB bảng dữ liệu(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

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Giải thích chi tiết về linh kiện  ESD Protection Devices ROHS
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  PESDNC2FD5VB Datasheet HTML 1Page - EVER SEMICONDUCTOR CO.,LIMITED PESDNC2FD5VB Datasheet HTML 2Page - EVER SEMICONDUCTOR CO.,LIMITED PESDNC2FD5VB Datasheet HTML 3Page - EVER SEMICONDUCTOR CO.,LIMITED PESDNC2FD5VB Datasheet HTML 4Page - EVER SEMICONDUCTOR CO.,LIMITED  
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The
PESDNC2FD5VB
protects
sensitive
semiconductor
components
from damage or
upset due to electrostatic discharge (ESD) and
other voltage induced transient events. They
feature large cross-sectional area junctions for
conducting
high
transient
currents,
offer
desirable electrical characteristics for board
level protection, such as fast response time,
low operating voltage. It gives designer the
flexibility to protect one bi-directional line in
applications where arrays are not practical.
80W peak pulse power per line (tP = 8/20μs)
DFN1006 package
Replacement for MLV(0402)
Bidirectional configurations
Response time is typically < 1ns
Low clamping voltage
RoHS compliant
Transient protection for data lines to
IEC61000-4-2(ESD) ±30KV(air), ±30KV(contact);
IEC61000-4-4 (EFT) 40A (5/50ns)
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260℃
Device meets MSL 1 requirements
Pure tin plating: 7 ~ 17 um
Pin flatness:≤3mil
Description
Feature
Applications
Cellular phones
Portable devices
Digital cameras
Power supplies
Mechanical Characteristics
PESDNC2FD5VB
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Rating
Symbol
Value
Units
Peak Pulse Power (tp=8/20μs)
Ppp
80
W
Operating Temperature
TJ
-55 to +150
℃
Storage Temperature
TSTG
-55 to +150
℃
Absolute maximum rating@25℃
Rev:2023A2
1


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