SFF110S.22 datasheet(2/2 Pages) SSDI

2 / 2 page

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, CA 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SFF110S.22

Electrical Characteristics

Symbol

Min

Typ

Max

Units

Drain – Source Breakdown

Voltage

VGS = 0 V; ID = 1 mA

BVDSS

100

––

Volts

Gate – Source Threshold

Voltage

VDS = 4 V; ID = 0.25 mA

VDS =4V; ID= 0.25mA; TA = 125ºC

VDS =5V; ID= 0.25mA; TA = -55ºC

VGS(th)1

VGS(th)2

VGS(th)3

2.0

––

3.0

2.0

4.0

––

Volts

Gate Leakage Current

VGS = +/- 20 V

VGS = +/- 20 V, TA= 125ºC

IGSS1

IGSS2

––

100

––

Drain Leakage Current

VGS = 0 V; VDS = 80 V

VGS = 0V; VDS = 80 V, TA = 125ºC

IDSS1

IDSS2

––

0.02

––

µA

VGS = 10 V, ID = 2.25 A

VGS = 10 V, ID = 3.50 A

RDS(on)1

RDS(on)2

––

0.55

0.58

0.60

0.61

Static Drain – Source

On-State Resistance

VGS= 10V, ID = 2.25A, TA = 125ºC

RDS(on)3

––

1.05

––

Ohm

Forward Voltage of the

Source – Drain Diode

ID = 3.5 A

VSD

––

1.2

1.5

Volts

Switching Time Test:

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

ID = 3.5 A, VGS = 10 V,

RG = 7.5 ohm, VDD = 50 V

td(on)

td(off)

––

Gate Charge Test:

On-State Gate Charge

Gate – Source Charge

Gate – Drain Charge

VGS= 10 V, VDS= 50 V

Qg(on)

Qgs

Qgd

––

6.55

1.61

3.46

Reverse Recovery Time

VDD= 50V, ID = 3.5 A,

dI/dt= 100 A/

µs

trr

––

180

Capacitance Test:

Input Capacitance

Output Capacitance

Reverse Transfer Cap.

VGS= 0 V, VDS= 25 V, f = 1MHz

Ciss

Coss

Crss

––

180

––

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0015A

DOC

NOTES:

* Pulse Test: Pulse Width = 300

µsec, Duty Cycle = 2%

1/ For Ordering Information, Price, Availability Contact

Factory.

2/ Screening per MIL-PRF-19500

3/ For Package Outlines Contact Factory.

4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.

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