SOLID STATE DEVICES, INC.

V

Drain to Source Breakdown Voltage

(VGS =0 V, ID = 250

µA)

-

-

RATING

SYMBOL

MIN

TYP

MAX

UNIT

100

Ω

Ω

Ω

Ω

Ω

Drain to Source on State Resistance

(VGS = 10 V)

-

-

V

Gate Threshold Voltage

(VDS = VGS, ID = 4mA)

-

4.0

2

Smho

Forward Transconductance

(VDS > ID(on) X RDS (on) Max, IDS=50% rated ID)

30

-

25

Zero Gate Voltage Drain Current

-

-

-

-

Gate to Source Leakage Forward

Gate to Source Leakage Reverse

-

-

+200

-200

-

-

At rated VGS

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

VGS = 10 V

50% rated VDS

50% rated ID

Qg

Qgs

Qgd

-

-

-

160

16

50

260

70

160

nsec

Turn on Delay Time

Rise Time

Turn off DelayTime

Fall Time

VDD=50%

rated VDS

50% rated ID

RG = 6.2

Ω

VGS=10V

tr

tf

-

-

-

-

30

35

100

40

40

100

120

80

V

1.3

1.75

-

Diode Reverse Recovery Time

Reverse Recovery Charge

120

-

200

-

-

IF = 10A

di/dt = 100A/

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VGS =0 Volts

VDS =25 Volts

f =1 MHz

Ciss

Coss

Crss

-

-

-

4500

1600

800

-

-

-

pF

nsec

A

On State Drain Current

(VDS > ID(on) x RDS(on) Max, VGS = 10 V)

-

-

75

Diode Forvard Voltage

nC

nA

250

1000

SFF75N10M

SFF75N10Z

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

NOTES:

1/ Maximum current limited by package, die rated at 75A.

-

-

0.025

0.030

ID = 37.5A

ID = 75 A

NOTE: All specifications are subject to change without notification.

SCDs for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00153F