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SFF40N30Z bảng dữ liệu(PDF) 1 Page - Solid States Devices, Inc |
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SFF40N30Z bảng dữ liệu(HTML) 1 Page - Solid States Devices, Inc |
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1 / 3 page ![]() Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFF40N30 __ __ __ ¦ ¦ ¦ ¦ ¦ ¦ ¦ ¦ ¦ ¦ + Screening 2/ __ = Not Screen TX = TX Level TXV = TXV Level S = S Level ¦ ¦ ¦ ¦ + Lead Option 3/ __ = Straight Leads DB = Down Bend UB = Up Bend + Package 3/ M = TO-254 Z = TO-254Z SFF40N30M SFF40N30Z 40 AMP / 300 Volts 0.10 Ω N-Channel Power MOSFET Features: • Rugged Construction with Polysilicon Gate Cell • Low RDS(ON) and High Transconductance • Excellent High Temperature Stability • Very Fast Switching Speed • Fast Recovery and Superior dV/dt Performance • Increased Reverse Energy Capability • Low Input and Transfer Capacitance for Easy Paralleling • Ceramic Seals for Improved Hermeticity • Hermetically Sealed Package • TX, TXV, Space Level Screening Available • Replacement for IXTH40N30 Types Maximum Ratings Symbol Value Units Drain – Source Voltage VDS 300 Volts Gate – Source Voltage VGS ±20 Volts Continuous Collector Current ID 40 Amps Power Dissipation TC = 25ºC TC = 55ºC PD 150 114 W Operating & Storage Temperature Top & Tstg -55 to +150 ºC Maximum Thermal Resistance Junction to Case RθJC 0.83 ºC/W TO-254 (M) TO-254Z (Z) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00141E DOC |
Số phần tương tự - SFF40N30Z |
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Mô tả tương tự - SFF40N30Z |
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