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BAV99S bảng dữ liệu(PDF) 2 Page - NXP Semiconductors

tên linh kiện BAV99S
Giải thích chi tiết về linh kiện  High-speed switching diode array
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nhà sản xuất  PHILIPS [NXP Semiconductors]
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BAV99S bảng dữ liệu(HTML) 2 Page - NXP Semiconductors

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2001 May 14
2
Philips Semiconductors
Product specification
High-speed switching diode array
BAV99S
FEATURES
• Small plastic SMD package
• High switching speed
• Two electrically isolated series configuration arrays
• Low capacitance.
APPLICATIONS
• General purpose switching in e.g. surface mounted
circuits.
• Rail to rail (ESD) protection.
DESCRIPTION
The BAV99S consists of four single die high speed
switching diodes in two electrically isolated series
configurations, encapsulated in the small SMD SC-88
(SOT363) plastic package.
PINNING
PIN
DESCRIPTION
1
anode (a1)
2
cathode (k2)
3
cathode (k3)/anode (a4)
4
anode (a3)
5
cathode (k4)
6
cathode (k1)/anode (a2)
Fig.1
Simplified outline (SC-88; SOT363)
and symbol.
Marking code: K1.
MSA370
12
3
65
4
Top view
65
4
12
3 MBL211
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Solder points at pins: 2, 3, 5 and 6.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse voltage
−
85
V
VR
continuous reverse voltage
−
75
V
IF
continuous forward current
−
200
mA
IFRM
repetitive peak forward current
−
450
mA
IFSM
non-repetitive peak forward current
square wave; Tj =25 °C prior to
surge; see Fig.4
t=1
µs
−
4.5
A
t=1ms
−
1A
t=1s
−
0.5
A
Ptot
total power dissipation
Ts ≤ 85 °C; note 1
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C



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