BAV74 datasheet(3/9 Pages) PHILIPS

3 / 9 page

2004 Jan 14

Philips Semiconductors

Product speciﬁcation

High-speed double diode

BAV74

ORDERING INFORMATION

ELECTRICAL CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. Device mounted on an FR4 printed-circuit board.

TYPE NUMBER

PACKAGE

NAME

DESCRIPTION

VERSION

BAV74

−

plastic surface mounted package; 3 leads

SOT23

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Per diode

forward voltage

see Fig.3

IF = 1 mA

715

IF = 10 mA

855

IF = 100 mA

1.0

reverse current

see Fig.5

VR =25V

VR =50V

0.1

µA

VR =25V; Tj = 150 °C30

µA

VR =50V; Tj = 150 °C

100

µA

diode capacitance

f = 1 MHz; VR = 0; see Fig.6

1.5

trr

reverse recovery time

when switched from IF = 10 mA to

IR = 10 mA; RL = 100 Ω; measured

at IR = 1 mA; see Fig.7

4ns

Vfr

forward recovery voltage

when switched from IF = 10 mA;

tr = 20 ns; see Fig.8

1.75

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth(j-tp)

thermal resistance from junction to tie-point

360

K/W

Rth(j-a)

thermal resistance from junction to ambient

note 1

500

K/W

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