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BAS316 bảng dữ liệu(PDF) 2 Page - NXP Semiconductors

tên linh kiện BAS316
Giải thích chi tiết về linh kiện  High-speed diode
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nhà sản xuất  PHILIPS [NXP Semiconductors]
Trang chủ  http://www.nxp.com
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BAS316 bảng dữ liệu(HTML) 2 Page - NXP Semiconductors

  BAS316 Datasheet HTML 1Page - NXP Semiconductors BAS316 Datasheet HTML 2Page - NXP Semiconductors BAS316 Datasheet HTML 3Page - NXP Semiconductors BAS316 Datasheet HTML 4Page - NXP Semiconductors BAS316 Datasheet HTML 5Page - NXP Semiconductors BAS316 Datasheet HTML 6Page - NXP Semiconductors BAS316 Datasheet HTML 7Page - NXP Semiconductors BAS316 Datasheet HTML 8Page - NXP Semiconductors BAS316 Datasheet HTML 9Page - NXP Semiconductors  
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2004 Feb 04
2
Philips Semiconductors
Product specification
High-speed diode
BAS316
FEATURES
• Very small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage: max. 100 V
• Repetitive peak reverse voltage: max. 100 V
• Repetitive peak forward current: max. 500 mA.
APPLICATIONS
• High-speed switching in e.g. surface mounted circuits.
DESCRIPTION
The BAS316 is a high-speed switching diode fabricated in
planar technology, and encapsulated in the SOD323 SMD
plastic package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
Fig.1 Simplified outline (SOD323) and symbol.
Marking code: A6.
Cathode side indicated by a bar.
handbook, halfpage
MAM157
ka
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Ts is the temperature at the soldering point of the cathode tab.
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BAS316
−
plastic surface mounted package; 2 leads
SOD323
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
−
100
V
VR
continuous reverse voltage
−
100
V
IF
continuous forward current
Ts =90 °C; note 1; see Fig.2
−
250
mA
IFRM
repetitive peak forward current
−
500
mA
IFSM
non-repetitive peak forward
current
square wave; Tj =25 °C prior to
surge; see Fig.4
t=1
µs
−
4A
t=1ms
−
1A
t=1s
−
0.5
A
Ptot
total power dissipation
Ts =90 °C; note 1
−
400
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C



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