BAS116H datasheet(3/9 Pages) PHILIPS

3 / 9 page

9397 750 14881

Product data sheet

Rev. 01 — 11 April 2005

3 of 9

Philips Semiconductors

BAS116H

75 V, low leakage diode in small SOD123F package

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Reﬂow soldering is the only recommended soldering method.

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

[2]

When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA

Table 6:

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] [2] -

330

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

K/W

Table 7:

Characteristics

Tamb = 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

forward voltage

IF = 1 mA

[1] -

0.90

IF = 10 mA

[1] -

1.00

IF = 50 mA

[1] -

1.10

IF = 150 mA

[1] -

1.25

reverse current

VR = 75 V

0.003 5.0

VR = 75 V; Tj = 150 °C

80.0

diode capacitance

VR = 0 V; f = 1 MHz

trr

reverse recovery

time

[2] -

0.8

3.0

µs

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