Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

650

685

--

V

IDSS

Zero Gate Voltage Drain Current

VDS= 650V, VGS= 0V, TJ=25ºC

--

--

1

μA

IGSS

Gate-Source Leakage

VGS = ±30V

--

--

±100

nA

VGS(th)

Gate-Source Threshold Voltage

VDS = VGS, ID = 250µA

2.0

--

4.0

V

RDS(on)

Drain-Source On-Resistance

(Note3)

VGS = 10V, ID = 3.5A

--

0.75

0.9

Ω

Ciss

Input Capacitance

VGS = 0V, VDS = 25V, f = 1.0MHz

--

1037

--

pF

Coss

Output Capacitance

--

138

--

Crss

Reverse Transfer Capacitance

--

5.3

--

Qg

Total Gate Charge

VDD=520V, ID = 9A, VGS = 10V

--

19

--

nC

Qgs

Gate-Source Charge

--

7.3

--

Qgd

Gate-Drain Charge

--

8.5

--

td(on)

Turn-on Delay Time

VDD=325V, ID = 7A, RG = 25Ω

--

18

--

ns

tr

Turn-on Rise Time

--

30

--

td(off)

Turn-off Delay Time

--

61

--

tf

Turn-off Fall Time

--

36

--

IS

Continuous Body Diode Current

TC = 25 ºC

--

--

9.0

A

ISM

Pulsed Diode Forward Current

--

--

36

A

VSD

Body Diode Voltage

TJ = 25ºC, ISD = 7A, VGS = 0V

--

--

1.2

V

trr

Reverse Recovery Time

VGS = 0V,IS = 7A, diF/dt =100A

/μs

--

431

--

ns

Qrr

Reverse Recovery Charge

--

2.6

--

μC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The EAS data shows Max. rating . IAS = 9.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC

3

、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

4

、The power dissipation is limited by 150℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

10N65FIP

650V N-Channel Enhancement Mode MOSFET

Rev:2023A2

2