Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

80

-

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=82V,VGS=0V

-

-

1

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

-

-

±100

nA

On Characteristics (Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

2

4

V

Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=20A

-

6

mΩ

Forward Transconductance

gFS

VDS=5V,ID=20A

-

50

-

S

Dynamic Characteristics (Note4)

Input Capacitance

Clss

VDS=25V,VGS=0V,

F=1.0MHz

-

5633

-

PF

Output Capacitance

Coss

-

268

-

PF

Reverse Transfer Capacitance

Crss

-

226

-

PF

Switching Characteristics (Note 4)

Turn-on Delay Time

td(on)

VDD=40V,RL=15Ω

RG=2.5Ω,VGS=10V

-

18

-

nS

Turn-on Rise Time

tr

-

12

-

nS

Turn-Off Delay Time

td(off)

-

56

-

nS

Turn-Off Fall Time

tf

-

15

-

nS

Total Gate Charge

Qg

VDS=40V,ID=50A,

VGS=10V

-

109.3

-

nC

Gate-Source Charge

Qgs

-

35.1

-

nC

Gate-Drain Charge

Qgd

-

25.8

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=95A

-

-

1.2

V

Diode Forward Current (Note 2)

IS

-

-

95

A

Reverse Recovery Time

trr

Tj=25℃,IF=100A

di/dt=100A/μs (Note3)

-

37

nS

Reverse Recovery Charge

Qrr

-

58

nC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

5. EAS condition：Tj=25℃,VDD=40V,VG=10V,L=0.5mH,Rg=25Ω

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