PUMH7 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 22

Philips Semiconductors

Product speciﬁcation

NPN resistor-equipped double transistor

PUMH7

THERMAL CHARACTERISTICS

Note

1. Refer to SC-88 standard mounting conditions.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

416

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor

ICBO

collector cut-off current

IE = 0; VCB =50V

−−

100

ICEO

collector cut-off current

IB = 0; VCE =30V

−−

µA

IB = 0; VCE =30V; Tj = 150 °C

−−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−−

100

hFE

DC current gain

IC = 1 mA; VCE = 5 V

200

330

−

VCEsat

collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA

−−

100

input resistor

3.3

4.7

6.1

Ω

collector capacitance

IE =ie = 0; VCB =10V; f=1MHz −−

2.5

Fig.3

DC current gain as a function of collector

current; typical values; per transistor.

VCE =5V.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

103

102

10−1

110

102

IC (mA)

hFE

MGR354

(2)

(3)

(1)

Fig.4

Collector-emitter saturation voltage as a

function of collector current; typical values;

per transistor.

IC/IB = 20.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

103

102

MGR353

10−1

110

102

IC (mA)

VCEsat

(mV)

(2)

(3)

(1)

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