FDV304P datasheet(2/5 Pages) EVVOSEMI

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=-250μA, VGS=0V

-30

VDS=-24V, VGS=0V

-1

VDS=-24V, VGS=0V, TJ=55℃

-5

Gate-Body leakage current

IGSS

VDS=0V, VGS=±12V

100

Gate Threshold Voltage

VGS(th)

VDS=VGS ID=-250μA

-0.4

-1.3

VGS=-4.5V, ID=-4A

VGS=-2.5V, ID=-1A

120

On state drain current

ID(ON)

VGS=-4.5V, VDS=-5V

-25

Forward Transconductance

gFS

VDS=-5V, ID=-5A

Input Capacitance

Ciss

954

Output Capacitance

Coss

115

Reverse Transfer Capacitance

Crss

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Total Gate Charge

9.4

Gate Source Charge

Qgs

Gate Drain Charge

Qgd

Turn-On DelayTime

td(on)

6.3

Turn-On Rise Time

3.2

Turn-Off DelayTime

td(off)

38.3

Turn-Off Fall Time

Body Diode Reverse Recovery Time

trr

IF=-4A, dI/dt=100A/μs

20.2

Body Diode Reverse Recovery Charge

Qrr

IF=5A, dI/dt=100A/μs

11.2

Maximum Body-Diode Continuous Current

-2.2

Diode Forward Voltage

VSD

IS=-1A,VGS=0V

-0.75

-1

Zero Gate Voltage Drain Current

IDSS

mΩ

VGS=-10V, VDS=-15V, RL=3.6Ω,RGEN=6Ω

RDS(On)

Static Drain-Source On-Resistance

VGS=0V, VDS=-15V, f=1MHz

VGS=-4.5V, VDS=-15V, ID=-4A

Rev:2023A2

SMD Type

P-Channel Enhancement MOSFET

FDV304P

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