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FDN359B bảng dữ liệu(PDF) 3 Page - EVER SEMICONDUCTOR CO.,LIMITED

tên linh kiện FDN359B
Giải thích chi tiết về linh kiện  N-Channel 30 V (D-S) MOSFET
PDF  6 Pages
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nhà sản xuất  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
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FDN359B bảng dữ liệu(HTML) 3 Page - EVER SEMICONDUCTOR CO.,LIMITED

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Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
0.42
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 0.42 A
(Note 2)
0.7
1.2
V
trr
Diode Reverse Recovery Time
12
20
ns
Qrr
Diode Reverse Recovery Charge
IF = 2.7A, diF/dt = 100 A/µs
3
5
nC
notes:
1.
RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 250
°C/W when mounted on a
0.02 in2 pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2.0%
Rev:2023A2
3
N-Channel 30 V (D-S) MOSFET
FDN359B



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