1997 Feb 18

3

Philips Semiconductors

Product specification

NPN microwave power transistor

PTC4001T

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

Note

1. At 0.1 mm from case.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

40

V

collector-emitter voltage

open base

−

16

V

collector-emitter voltage

35

V

emitter-base voltage

open collector

−

3V

average collector current

−

0.25

A

total power dissipation

−

4W

storage temperature

−65

+200

°C

operating junction temperature

−

200

°C

soldering temperature

t < 10 s; note 1

−

235

°C

Fig.2

Power derating curve as a function of

mounting base temperature.

handbook,

0

50

100

200

5

0

4

150

3

2

1

MGD975

Ptot max

(W)

Tmb (°C)

Fig.3 DC SOAR.

(1) Region of permissible DC operation.

handbook, halfpage

MGA028

10

1

1

VCE (V)

IC

(A)

0.08

0.22

16

(1)

(2)