Electrical Characteristics(TJ=25℃ unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Drain-Source Breakdown Voltage

BVDSS

VGS=0V,IDS=250uA

60

-

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=60V,VGS=0V

-

-

1

uA

Gate-Body Leakage

IGSS

VGS=±20V,VDS=0V

-

-

±100

nA

ON CHARACTERISTICS

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Gate Threshold Voltage

VGS(TH)

VDS=VGS,IDS=250uA

1.0

1.6

2.5

V

Drain-Source On-State Resistance

RDS(ON)

VGS=10V,IDS=15A

-

25

35

m

Ω

VGS=4.5V,IDS=10A

-

30

40

m

Ω

DYNAMIC CHARACTERISTICS

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Input Capacitance

CiSS

VDS =25V, VGS = 0V,

f=1MHz

-

1562

-

pF

Output Capacitance

COSS

-

75.4

-

Reverse Transfer Capacitance

Crss

-

66.8

-

SWITCHING CHARACTERISTICS

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Turn-On Delay Time

Td(on)

VGS=10V,VDs=30V,

RGEN=1.8Ω

ID=15A

-

7.5

-

ns

Rise Time

tr

-

21

-

Turn-Off Delay Time

Td(off)

-

16

-

Fall Time

tf

-

23.5

-

Total Gate Charge at 10V

Qg

VDS=30V,IDS=15A,

VGS=10V

-

25

-

nC

Gate to Source Gate Charge

Qgs

-

4.5

-

Gate to Drain“Miller”Charge

Qgd

-

6.5

-

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Drain-Source Diode Forward Voltage

VSD

VGS=0V,IDS=15A

-

-

1.2

V

Reverse Recovery Time

trr

TJ=25℃,IF=15A

di/dt=100A/us

-

29

-

nS

Reverse Recovery Charge

Qrr

-

45

-

nC

Notes:

1: Repetitive rating, pulse width limited by maximum junction temperature.

2: Surface mounted on FR4 Board, t≤10sec.

3: Pulse width ≤ 300μs, duty cycle ≤ 2%.

4: EAS condition: L=0.5mH,VDD=30V,VG=10V,VGATE=60V,Start TJ=25℃.

Rev:2023A2

2

STD20NF06L